1 · Design knobs

Presets pick the inversion corner while holding GBW (they re-bias ID).

Sets power directly, and buys gm (→ GBW).

← strong inversion (small, fast) · weak inversion (efficient, huge) →

↑ CL ⟹ ↓ GBW (same gm drives a heavier load).

2 · Spec limits (red)
GBW
100
MHz
Power
76
µW
Area
119
µm²
✔ Fully compliant

3 · Power–Area Pareto DRAG THE DOT

Curve = all designs at the current GBW. Red lines are the Power & Area spec limits; the shaded red half-planes are violation zones. Dragging trades power↔area at fixed GBW.

4 · 3-D design space DRAG TO ORBIT

Axes: GBW · Power · Area. Each red plane is a spec; the translucent red slab beyond it is the violation volume. The dot goes red inside any slab.

Governing equations — live (symbolic = with your current numbers)
Transconductance bought by the bias current
Gain-bandwidth of the gm stage — this is why CL moves GBW
Power
Active device area (W = ID/JD, L = 0.5 µm, 4 devices)
Speed ceiling (feasible only if GBW ≤ this)
Spec compliance
MetricConstraintSpec limitCurrent designMarginStatus
Power≤ max150 µW76 µW2.0×✔ PASS
Area≤ max300 µm²119 µm²2.5×✔ PASS
GBW≥ min & feasible50 MHz100 MHz2.0×✔ PASS

Margin = spec ÷ current (Power/Area) or current ÷ spec (GBW). ≥ 1.0× passes; fully compliant only when all three pass.

The design-target table (from the sketch)
TargetGBW (speed)Efficiency (power)Compactness (area)
Minimize Areafixed — hold the specfixed — accept the power✅ optimize — strong inversion, small W
Lowest Powerfixed — hold the spec✅ optimize — high gm/ID❌ flexible — area balloons (large W)

The single physical knob is inversion level (gm/ID). At a fixed GBW, turning it up for efficiency lets you drop ID (lower power) but the device must get wide (more area); turning it down shrinks area but forces more current. CL and ID set where along GBW you sit.

Model details & caveats

First-order single-stage-OTA model tuned to a 180 nm-class node (SKY130, VDD=1.8 V nominal): JD(x)=37.6·e−x/3.77 µA/µm current density, fT(x)=20 GHz·e−(x−5)/8.69, usable GBW ceiling ≈ fT/8, area counts 4 active devices at L=0.5 µm. Absolute numbers are illustrative — the shape (GBW ∝ ID·(gm/ID)/CL, Area ∝ e+gm/ID) is the physics that holds across nodes.

Part of borenw.github.io — interactive analog circuit teaching tools.